The authors show that mobility and residual charge carrier concentration differ significantly, if interface states are neglected. The extracted values of mobility and residual charge carrier concentration are compared with corresponding results from a commonly accepted model which neglects the effect of interface states. Knowing the interface state density allows us to fit our model to measured drain resistance–gate voltage characteristics. By fitting our model to measurements of capacitance–voltage characteristics and relating the applied gate voltage to the Fermi level position, the interface state density is found. A semiempirical model describing the influence of interface states on characteristics of gate capacitance and drain resistance versus gate voltage of top gated graphene field effect transistors is presented.
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